N-Channel Silicon MOSFET General-Purpose Switching Device

文件：40.47 Kbytes 页数：4 Pages

SANYO

三洋

Nch+Nch

ONSEMI

安森美半导体

DirectFET Power MOSFET

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件：269.27 Kbytes 页数：9 Pages

IRF

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件：282.09 Kbytes 页数：10 Pages

IRF

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件：282.09 Kbytes 页数：10 Pages

IRF