HV9120X

High-VoltageCurrent-ModePWMController

GeneralDescription TheSupertexHV9123isaSwitchModePowerSupply(SMPS)controllersubsystemthatcanstartandrundirectlyfromalmostanyDCinput,froma12Vbatterytoarectifiedandfiltered240VACline.Itcontainsalltheelementsrequiredtobuildasingle-switchconverterexcept

IDTP9120

TripleChannelSynchronousStep-DownSwitcherwithIntegratedFET

IDTP9120

TripleChannelSynchronousStepDownSwitcherwithIntegratedFET

Features InputVoltageRange:2.7Vto5.5V Threestep-downconverterswithintegratedFETs Buck1:2A Buck2:2A Buck3:3A Buck3tooperateinBuckorSwitchmode FactoryProgrammableOutputVoltage:0.8-3.4V AutomaticPFM/PWMorforcedPWMmode Switchingfrequency2MHz

IRF9120

iscN-ChannelMOSFETTransistor

IRF9120

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-6A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRFD9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina

IRFD9120

PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-1.0A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •ForAutomaticInsertion •En

IRFD9120

1.0A,100V,0.6Ohm,P-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

IRFD9120

PowerMOSFET

FEATURES •Dynamicdv/dtrating •Repetitiveavalancherated •ForautomaticInsertion •Endstackable •P-channel •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

IRFD9120

1.0A,100V,0.6Ohm,P-ChannelPowerMOSFET

Features •1.0A,100V •rDS(ON)=0.6W •SinglePulseAvalancheEnergyRated •SOAisPowerDissipationLimited •NanosecondSwitchingSpeeds •LinearTransferCharacteristics •HighInputImpedance