isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：260.24 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • En

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IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

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VishayVishay Siliconix

威世

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

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Intersil