N Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMO

文件：85.3 Kbytes 页数：3 Pages

Clare

Clare, Inc.

N-Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon ga

文件：112.77 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel Depletion Mode FET

文件：111.34 Kbytes 页数：5 Pages

Clare

Clare, Inc.

电信集成电路

·VDSS: 100V - 1700V\n·Avalanche energy rated\n·ID25: 0.1A - 20A\n·Ultra-low Rds(on) - 330 milliohms\n·Remain ON at or above zero Gate Voltage;

Littelfuse

力特

N-Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon ga

文件：112.77 Kbytes 页数：5 Pages

IXYS

艾赛斯

N Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMO

文件：85.3 Kbytes 页数：3 Pages

Clare

Clare, Inc.

N Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMO

文件：76.71 Kbytes 页数：4 Pages

Clare

Clare, Inc.

N Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMO

文件：76.71 Kbytes 页数：4 Pages

Clare

Clare, Inc.

N Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMO

文件：85.3 Kbytes 页数：3 Pages

Clare

Clare, Inc.

N-Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon ga

文件：112.77 Kbytes 页数：5 Pages

IXYS

艾赛斯