升压型 LED 驱动器

Chiphomer

启攀微电子

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON) ◾ 72 mΩ @VGS = -4.5V ◾ 108 mΩ @VGS = -2.7V ◾ 123 mΩ @VGS = -2.5V • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Relia

文件：170.17 Kbytes 页数：4 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON): • 72 mΩ @VGS = -4.5V • 108 mΩ @VGS = -2.7V • 123 mΩ @VGS = -2.5V • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Note 4)

文件：193.29 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

P-Channel Mosfet

Application «+ Load/Power Switching «Interfacing Switching * Logic Level Shift

文件：2.53406 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子