包装：盒 类别：工具 螺丝和螺母起子 描述：NUTDRIVER 7/16\

ATG

Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：212.24 Kbytes 页数：2 Pages

CENTRAL

Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：192.89 Kbytes 页数：2 Pages

CENTRAL

SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose

文件：89.83 Kbytes 页数：1 Pages

WINGS

永盛电子