首页 >CMU50N10>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS100V RDSON(MAX.)50mΩ ID7A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS100V RDSON(MAX.)50mΩ ID8A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
HighVoltagePowerSupplies | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | TDK | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HighdensitycelldesignforultralowRdson | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
N-ChannelEnhancementModeMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-Channel100-V(D-S)MOSFET | BWTECH Bruckewell Technology LTD | BWTECH |
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