首页 >CMU40N03低压MOS管>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N-Channel30-V(D-S)MOSFETHalogen-free | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
TrenchFET짰PowerMOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
40A03VNChannelMosfet | FCIFirst Components International 戈采戈采企业股份有限公司 | FCI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET BVDSS30V RDS(ON)17mΩ ID40A Description TheGE40N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsandsuite | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET BVDSS30V RDS(ON)21mΩ ID36A Description TheGI40N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.Thethrough-holeversion(TO-251)isavailableforlow-profileapplicationsandsuitedforlowv | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET BVDSS30V RDS(ON)17mΩ ID40A Description TheGU40N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-263packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicat | GTM 勤益投資控股股份有限公司 | GTM | ||
N-ChannelEnhancement-ModeMOSFET(25V,40A) Features •RDS(on)=16mΩ@VGS=10V,ID=20A •RDS(on)=25mΩ@VGS=4.5V,ID=20A •Advancedtrenchprocesstechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent •ImprovedShoo | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
N-CHANNELPowerMOSFET FEATURES ♦LowONResistance ♦LowGateCharge ♦PeakCurrentvsPulseWidthCurve ♦InductiveSwitchingCurves APPLICATION ♦FastSwitching ♦SimpleDriveRequirement ♦LowGateCharge | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
N-CHANNELPowerMOSFET [magic-matsu] | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI/台湾微碧 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Cmos/广东场效应 |
1年内 |
TO-251 |
150000 |
原厂FAE技术支持 共奕芯城一站式电子元器件采购平台支 |
询价 | ||
Cmos |
100000 |
23 |
6000 |
全新、原装 |
询价 | ||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
CMOS/场效应半导体 |
23+ |
TO-251 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
CMOS/场效应半导体 |
23+ |
TO-251 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
OHMITE |
20+ |
电位计 |
667 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
新 |
5 |
全新原装 货期两周 |
询价 | ||||
2022+ |
1 |
全新原装 货期两周 |
询价 | ||||
Ohmite |
2010+ |
N/A |
59 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 |
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