OPA4392

OPAx392Precision,Low-Offset-Voltage,Low-Noise,Low-Input-Bias-Current,Rail-to-RailI/O,e-trim™OperationalAmplifiers

1Features •Lowoffsetvoltage:±10μV(maximum) •Low-drift:±0.18μV/°C •Lowinputbiascurrent:10fA •Lownoise:4.4nV/√Hzat10kHz •Low1/fnoise:2μVPP(0.1Hzto10Hz) •Lowsupplyvoltageoperation:1.7Vto5.5V •Lowquiescentcurrent:1.22mA •Fastsettling:0.75μs(1Vto0.1%

OPA4392

OPAx392Precision,Low-Offset-Voltage,Low-Noise,Low-Input-Bias-Current,Rail-to-RailI/O,e-trim™OperationalAmplifiers

1Features •Lowoffsetvoltage:±10μV(maximum) •Low-drift:±0.18μV/°C •Lowinputbiascurrent:10fA •Lownoise:4.4nV/√Hzat10kHz •Low1/fnoise:2μVPP(0.1Hzto10Hz) •Lowsupplyvoltageoperation:1.7Vto5.5V •Lowquiescentcurrent:1.22mA •Fastsettling:0.75μs(1Vto0.1%

OPA4392

OPAx392Precision,Low-Offset-Voltage,Low-Noise,Low-Input-Bias-Current,Rail-to-RailI/O,e-trim™OperationalAmplifiers

1Features •Lowoffsetvoltage:±10μV(maximum) •Low-drift:±0.18μV/°C •Lowinputbiascurrent:10fA •Lownoise:4.4nV/√Hzat10kHz •Low1/fnoise:2μVPP(0.1Hzto10Hz) •Lowsupplyvoltageoperation:1.7Vto5.5V •Lowquiescentcurrent:1.22mA •Fastsettling:0.75μs(1Vto0.1%

OPA4392PWR

OPAx392Precision,Low-Offset-Voltage,Low-Noise,Low-Input-Bias-Current,Rail-to-RailI/O,e-trim™OperationalAmplifiers

1Features •Lowoffsetvoltage:±10μV(maximum) •Low-drift:±0.18μV/°C •Lowinputbiascurrent:10fA •Lownoise:4.4nV/√Hzat10kHz •Low1/fnoise:2μVPP(0.1Hzto10Hz) •Lowsupplyvoltageoperation:1.7Vto5.5V •Lowquiescentcurrent:1.22mA •Fastsettling:0.75μs(1Vto0.1%

PE4392

BNCFEMALEBULKHEADCRIMPATTACHMENTFORRG188-DS&RG316-DS

PMBF4392

N-channelFETs

DESCRIPTION Symmetricalsiliconn-channeldepletiontypejunctionfield-effecttransistorsonaplasticmicrominiatureenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorsareintendedforlow-powerchopperorswitchingapplicationsinindustry.

PMBF4392

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

PN4392

N-CHANNELSILICONJFET

PN4392

N-ChannelSwitch

N-ChannelSwitch Thisdeviceisdesignedforlowlevelanalogswitching,sample andholdcircuitsandchopperstabalizedamplifiers.Sourced fromProcess51.SeeJ111forcharacteristics.

PN4392

N-channelsiliconfield-effecttransistors

DESCRIPTION Symmetricalsiliconn-channeljunctionFETsinplasticTO-92envelopes.Theyareintendedforapplicationssuchasanalogswitches,choppers,commutatorsetc.