N-channel FETs

DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry.

文件：40.84 Kbytes 页数：7 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

PMBF4392

Overview Archived content is no longer updated and is made available for historical reference only.

恩XP

N-Channel Switch

N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.

文件：474.27 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-channel silicon field-effect transistors

DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

文件：36.4 Kbytes 页数：6 Pages

PHI

PHI

N-Channel JFET Switch

FEATURES • rds(on)

文件：29.72 Kbytes 页数：2 Pages

CALOGIC