MOS

CMOS

场效应

N-Channel Enhancement MOSFET

Features • VDS=100V, ID=30A • RDS(ON)=17mΩ@VGS=10V(Typ.) • RDS(ON)=22mΩ@VGS=4.5V(Typ.) • High Power and current handing capability • Lead free product is acquired • Surface Mount Package Main Applications • Battery Protection • Load Switch • Power Management

文件：235.77 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

100V N-Channel MOSFET

文件：2.4784 Mbytes 页数：7 Pages

FOSTER

福斯特半导体

N -Channel Power MOSFET

文件：359.22 Kbytes 页数：3 Pages

FS