MOS

CMOS

场效应

Silicon N-Channel Power MOSFET

General Description： CS100N03 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applicatio

文件：858.46 Kbytes 页数：10 Pages

HUAJING-MICRO

华润微电子

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

文件：240.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

30V-Channel Mosfet

文件：4.39155 Mbytes 页数：7 Pages

FOSTER

福斯特半导体