2.0-20.0 GHz GaAs MMIC 1W Power Amplifier

♦ Small Size: 2.32x1.30x0.076mm\n♦ Integrated On-Chip DC Blocking\n♦ Single Bias Operation\n♦ Directly Cascadable - Fully Matched\n♦ Unconditionally Stable\n♦ P1dB: 29 dBm, Typ. @ 18 GHz\n♦ Linear Gain: 9.5 dB, Typ. @ 18 GHz\n♦ pHEMT Technology\n♦ Silicon Nitride Passivation;

MIMIX

2.0-22.0 GHz GaAs MMIC Power Amplifier

General Description\nMimix Broadband’s distributed 2.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 10.0 dB with a +30.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensu ♦ Ultra Wide Band Power Amplifier\n♦ Compact Size/Self Bias Architecture\n♦ Positive Gain Slope\n♦ 10.0 dB Small Signal Gain\n♦ +30.0 dBm P1dB Compression Point\n♦ +39.0 dBm Third Order Intercept\n♦ 100% Visual Inspection to MIL-STD-883 Method 2010 ;

MIMIX

2.0-22.0 GHz GaAs MMIC Power Amplifier

MIMIX

Package：16-VFQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP GP 11GHZ-20GHZ 16QFN

MACOM Technology Solutions

包装：散装 类别：RF/IF，射频/中频和 RFID RF 天线 描述：RF ANT 2.4/5.5GHZ PUCK CAB 91CM

TE Connectivity Laird

包装：散装 类别：RF/IF，射频/中频和 RFID RF 天线 描述：RF ANT 2.4/5.5GZ PUCK RP-TNC PNL

TE Connectivity Laird