2.0-20.0 GHz GaAs MMIC 1W Power Amplifier

文件：246.63 Kbytes 页数：5 Pages

MIMIX

2.0-20.0 GHz GaAs MMIC 1W Power Amplifier

♦ Small Size: 2.32x1.30x0.076mm\n♦ Integrated On-Chip DC Blocking\n♦ Single Bias Operation\n♦ Directly Cascadable - Fully Matched\n♦ Unconditionally Stable\n♦ P1dB: 29 dBm, Typ. @ 18 GHz\n♦ Linear Gain: 9.5 dB, Typ. @ 18 GHz\n♦ pHEMT Technology\n♦ Silicon Nitride Passivation;

MIMIX

2.0 to 20.0 GHz GaAs MMIC 1W Power Amplifer

General Description Mimix Broadband’s distributed 2.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 10.0 dB with a +30.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to

文件：1.07807 Mbytes 页数：5 Pages

MIMIX

2.0-20.0 GHz GaAs MMIC 1W Power Amplifier

文件：246.63 Kbytes 页数：5 Pages

MIMIX

2.0-22.0 GHz GaAs MMIC Power Amplifier

文件：176.18 Kbytes 页数：6 Pages

MIMIX

2.0-22.0 GHz GaAs MMIC

文件：277.04 Kbytes 页数：9 Pages

MIMIX

2.0-22.0 GHz GaAs MMIC Power Amplifier

文件：176.18 Kbytes 页数：6 Pages

MIMIX

2.0-22.0 GHz GaAs MMIC

文件：277.04 Kbytes 页数：9 Pages

MIMIX

2.0-22.0 GHz GaAs MMIC Power Amplifier

文件：176.18 Kbytes 页数：6 Pages

MIMIX

2.0-22.0 GHz GaAs MMIC Power Amplifier

General Description\nMimix Broadband’s distributed 2.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 10.0 dB with a +30.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensu ♦ Ultra Wide Band Power Amplifier\n♦ Compact Size/Self Bias Architecture\n♦ Positive Gain Slope\n♦ 10.0 dB Small Signal Gain\n♦ +30.0 dBm P1dB Compression Point\n♦ +39.0 dBm Third Order Intercept\n♦ 100% Visual Inspection to MIL-STD-883 Method 2010 ;

MIMIX