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30N06

30Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06

30Amps,60VoltsN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

30N06

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

30N06

60V,30AN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06

60VN-ChannelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

UMWUMW

友台友台半导体

30N06.

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06B

25A竊?0VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

30N06L

30Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N06-Q

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N06V-Q

N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR

DESCRIPTION TheUTC30N06V-QisalowvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

FQB30N06

60VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB30N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB30N06L

60VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB30N06L

N-ChannelQFET짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB30N06LTM

N-ChannelQFET짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD30N06

60VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
23+
N/A
85500
正品授权货源可靠
询价
VB
2019
TO-220FM
55000
绝对原装正品假一罚十!
询价
C
21+
TO-220FM
15500
询价
VBSEMI/台湾微碧
23+
TO220F
50000
全新原装正品现货,支持订货
询价
VBsemi
21+
TO220F
50000
全新原装正品现货,支持订货
询价
VBsemi
21+
TO220F
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
CMOS
TO-220F
7796
一级代理 原装正品假一罚十价格优势长期供货
询价
VBSEMI/台湾微碧
22+21+
TO220F
10026
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
VBsemi
2230+
TO220F
5892
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
VBsemi
2023+
TO220F
700000
柒号芯城跟原厂的距离只有0.07公分
询价
更多CMF30N06L供应商 更新时间2024-5-23 11:36:00