MOS

CMOS

场效应

MOS

CMOS

场效应

40V N-Channel PowerTrench MOSFET

文件：384.33 Kbytes 页数：6 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.75 Kbytes 页数：2 Pages

ISC

无锡固电

40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ

Features Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimi

文件：476.82 Kbytes 页数：8 Pages

ONSEMI

安森美半导体