DC-40 GHz Low Phase Noise Amplifier

Qorvo's CMD327 is a wideband GaAs MMIC low phase noise amplifier ideally suited for military, space, and communications systems. At 20 GHz the device delivers 11.1 dB of gain, has a saturated output power of +21.4 dBm, and has a noise figure of 4.5 dB. Also, with an input signal of 6 GHz, the amplif • Wide bandwidth\n• Low phase noise\n• High Power\n• Low current consumption\n• Small die size;

Qorvo

威讯联合

DC-40 GHz Low Phase Noise Amplifier

文件：360.68 Kbytes 页数：11 Pages

QORVO

威讯联合

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC337. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

文件：42.25 Kbytes 页数：8 Pages

PHI

PHI

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

文件：166.78 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon NPN Transistor Power Amp, Switch

Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching Time

文件：24.85 Kbytes 页数：2 Pages

NTE