0.5-20 GHz GaN Power Amplifier

文件：236.49 Kbytes 页数：9 Pages

QORVO

威讯联合

0.5-20 GHz GaN Power Amplifier

文件：236.49 Kbytes 页数：9 Pages

MMIC

0.5-20 GHz (L, S, C, X, Ku, K Band) GaN Power Amplifier MMIC

Qorvo's CMD184 is a 4.5 W wideband GaN MMIC power amplifier die which operates from 0.5 to 20 GHz. The amplifier delivers greater than 13 dB of gain with a corresponding output 1 dB compression point of +34.5 dBm and a saturated output power of +36.5 dBm. The CMD184 amplifier is a 50 ohm matched des • High gain\n• High linearity\n• High output power\n• Ultra wideband performance;

Qorvo

威讯联合

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts

文件：194.51 Kbytes 页数：9 Pages

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts

文件：194.51 Kbytes 页数：9 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Audio Power Amp, Switch

Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits. Features: • Excellent Safe Area Limits

文件：22.3 Kbytes 页数：2 Pages

NTE