首页 >CMBT5401(2L)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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PNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT5401typeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications MARKINGCODE:C2L | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
ENHANCEDSPECIFICATIONSURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT5401EisanPNPSiliconTransistor,packagedinanSOT-23case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltageandsmallspacesavingpackaging MARKINGCODE:C540 FEATURES: •HighCollectorBreakdownVoltage250V | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
PNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMUT5401typeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. MARKINGCODE:4C5 | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
ENHANCEDSPECIFICATIONSURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMUT5401EisaPNPSiliconTransistor,packagedinanSOT-523case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltageandsmallspacesavingpackaging. MARKINGCODE:4C5 FEATURES: •HighCollectorBreakdownVoltage250V | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCXT5401typeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •SwitchingandamplificationinhighvoltageApplicationssuchastelephony •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponreques | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
TRANSISTOR(PNP) FEATURE Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.500mA) Highvoltage(max.160v) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
SOT-89-3LPlastic-EncapsulateTransistors FEATURE Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.500mA) Highvoltage(max.160v) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
SurfaceMountPNPSiliconTransistor Features ●Highcurrent(max.500mA). ●Lowvoltage(max.150V). | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
SurfaceMountPNPSiliconTransistor FEATURES ●Switchingandamplificationinhighvoltage. ●Lowcurrent(max.600mA) ●Highvoltage(max.180V) APPLICATIONS ●Highvoltageamplifierapplication. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN |
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