N-沟道 VDMOS系列

JDsemi

深圳晶导

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

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MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

文件：192.39 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand

文件：156.71 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉