TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

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Motorola

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

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Motorola

摩托罗拉

High Energy PowerFET

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ONSEMI

安森美半导体

TMOS POWER FET 6.0 AMPERES 600 VOLTS

恩XP

恩智浦

TMOS POWER FET 6.0 AMPERES 600 VOLTS

恩XP

恩智浦

High Energy PowerFET

ONSEMI

安森美半导体