IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE IC ...................................................................200A VCES .........................................................1200V Insulated Type 2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc

文件：103.65 Kbytes 页数：5 Pages

Mitsubishi

三菱电机

Dual IGBTMOD 200 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolate

文件：57.79 Kbytes 页数：4 Pages

POWEREX

Dual IGBTMOD NF-Series Module 200 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated f

文件：69.51 Kbytes 页数：4 Pages

POWEREX

IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE IC ...................................................................200A VCES .........................................................1200V Insulated Type 2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc

文件：103.65 Kbytes 页数：5 Pages

Mitsubishi

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configurationwith each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat

文件：49.95 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Dual IGBTMOD 200 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolate

文件：59.9 Kbytes 页数：4 Pages

POWEREX

Trench Gate Design Dual IGBTMOD?

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free wheel diode. All components and interconnects are isolated f

文件：171.82 Kbytes 页数：4 Pages

POWEREX

MITSUBISHI IGBT MODULES

IC ...................................................................200A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

文件：93.32 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat

文件：50.46 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Dual IGBTMOD 200 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolate

文件：60.44 Kbytes 页数：4 Pages

POWEREX