RP-11 Single Contact Bayonet Base

RP-11 Single Contact Bayonet Base

文件：218.8 Kbytes 页数：1 Pages

CML

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

文件：160.12 Kbytes 页数：2 Pages

TRSYS

Transys Electronics

Contact Bayonet Base

RP-11 Single Contact Bayonet Base RP-11 Double Contact Bayonet Base

文件：32.28 Kbytes 页数：1 Pages

VCC

Tilt Switch

FEATURES • Resistant to Ambient Environmental Conditions • Case Material : Tin Plated • Customization Available

文件：1.32617 Mbytes 页数：5 Pages

COMUS

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

文件：65.379 Kbytes 页数：2 Pages

PANJIT

強茂

50 V, 10 A, high current silicon bridge rectifier

TRANSYS

HIGH POWER SWITCHING USE

● IC ................................................................ 1000A ● VCES.......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters Servo controls, etc

文件：95.94 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offeri

文件：49.54 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Single IGBTMOD 1000 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplat

文件：64.28 Kbytes 页数：4 Pages

POWEREX

Single IGBTMOD 1000 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：64.879 Kbytes 页数：4 Pages

POWEREX