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2N7002NXAK

丝印:CM;Package:SOT23;60 V, single N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protected 3. Applications

文件:279.69 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2SD999

丝印:CM;Package:SOT-89;NPN Silicon Epitaxial Transistor

FEATURES Low Collector Saturation Voltage: VCE(sat)

文件:814.42 Kbytes 页数:5 Pages

DGNJDZ

南晶电子

4.0SMF33A

丝印:CM;Package:SOD-123;3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glass passivated chip 400W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. Meet AEC-Q101 requirement

文件:3.27335 Mbytes 页数:6 Pages

UNSEMI

优恩半导体

6.0SMAJ33CA

丝印:CM;Package:DO-214AC;5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glass passivated chip 600W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01% Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260°C/10s at terminals. RoHS compliant Features

文件:3.35089 Mbytes 页数:6 Pages

UNSEMI

优恩半导体

74AHCT1G125GM

丝印:CM;Package:XSON6;Bus buffer/line driver; 3-state

1. General description The 74AHC1G125/74AHCT1G125 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features and benefits • Wide supply voltage range from 2.0 V to

文件:246.36 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

74AHCT1G125GW

丝印:CM;Package:TSSOP5;Bus buffer/line driver; 3-state

1. General description The 74AHC1G125/74AHCT1G125 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features and benefits • Wide supply voltage range from 2.0 V to

文件:246.36 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

74AHCT1G125GW

丝印:cm;Package:TSSOP5;Bus buffer/line driver; 3-state

General description 74AHC1G125-Q100 and 74AHCT1G125-Q100 are high-speed Si-gate CMOS devices. They provide one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A HIGH at OE causes the output to assume a high-impedance OFF-sta

文件:700.76 Kbytes 页数:15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

74AHCT1G125GW-Q100

丝印:CM;Package:TSSOP5;Bus buffer/line driver; 3-state

1. General description The 74AHC1G125-Q100/74AHCT1G125-Q100 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electron

文件:235.58 Kbytes 页数:13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

74AHCT1G125GW-Q100

丝印:CM;Package:TSSOP5;Bus buffer/line driver; 3-state

1. General description The 74AHC1G125-Q100/74AHCT1G125-Q100 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electron

文件:258.81 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC56-16PAS

丝印:CM;Package:SOT1061D;45V/60V/80V, 1A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

文件:1.40185 Mbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    CM

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 33Vr 600W 11.3A 5% BiDirectional

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

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更多CM供应商 更新时间2025-8-24 14:13:00