Super Junction MOSFET

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锴威特

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.65Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.97 Kbytes 页数：2 Pages

ISC

无锡固电

650V CoolMOS??CE Power Transistor

文件：1.16448 Mbytes 页数：16 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.34622 Mbytes 页数：17 Pages

Infineon

英飞凌