CLF3H0035S-100数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.

特性 Features

• 100 W general purpose broadband RF power GaN HEMT
• High efficiency
• Low thermal resistance
• Excellent ruggedness
• Designed for broadband operation in the frequency range from DC to 3.5 GHz
• For RoHS compliance see the product details on the Ampleon website

简介

CLF3H0035S-100属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的CLF3H0035S-100晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。