CLF1G0035S-100P数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

特性 Features

• Frequency of operation is from DC to 3.5 GHz
• 100 W general purpose broadband RF Power GaN HEMT
• Excellent ruggedness (VSWR 10 : 1)
• High voltage operation (50 V)
• Thermally enhanced package

应用 Application

• Commercial wireless infrastructure (Cellular, Wimax)
• Radar
• Broadband general purpose amplifier
• Public mobile radios
• Industrial, scientific, medical
• Jammers
• EMC testing
• Defense application

简介

CLF1G0035S-100P属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的CLF1G0035S-100P晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。