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FRS234R

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FSL234D

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL234R

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSPYE234F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYE234R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSS234

DC/DCConverterApplications

Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

FSS234D

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS234R

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FT234XD

SinglechipUSBtoasynchronousserialdatatransferinterface

FTDIFuture Technology Devices International Ltd.

飞特帝亚英商飞特帝亚有限公司

FT234XD

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd.

飞特帝亚英商飞特帝亚有限公司

技术参数

  • atIF mA:

    500

  • IRmA (max):

    10

  • qHPdeg. (typ):

    100

  • lp nm (typ):

    880

  • Package:

    TO-46

供应商型号品牌批号封装库存备注价格
CLAIREX
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
VIA
23+
BGA
7100
绝对全新原装!现货!特价!请放心订购!
询价
VIA
05+06+
BGA
4200
全新原装进口自己库存优势
询价
VIA
24+
BGA
6
询价
VIA
2016+
BGA
8880
只做原装,假一罚十,公司可开17%增值税发票!
询价
VIA
17+
BGA
6200
100%原装正品现货
询价
VIA
24+
BGA
4652
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
AVI
24+
12
原装现货,可开13%税票
询价
TI
16+
BGA
4000
进口原装现货/价格优势!
询价
VIA
2020+
BGA
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多CLE234E供应商 更新时间2025-7-28 16:19:00