| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FSPYE234F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件:79.62 Kbytes 页数:8 Pages | Intersil | Intersil | |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件:79.62 Kbytes 页数:8 Pages | Intersil | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件:79.62 Kbytes 页数:8 Pages | Intersil | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件:79.62 Kbytes 页数:8 Pages | Intersil | Intersil | ||
DC / DC Converter Applications Features • Low ON-resistance. • 4.0V drive. • Ultrahigh-speed switching. 文件:29.28 Kbytes 页数:4 Pages | SANYO 三洋 | SANYO | ||
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:45.39 Kbytes 页数:8 Pages | Intersil | Intersil |
详细参数
- 型号:
FSPYE234F
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
2016+ |
DIP8 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
FSC |
24+ |
DIP8 |
5000 |
只做原装公司现货 |
询价 | ||
FAIRCHILD |
24+ |
DIP-8 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
询价 | ||
24+ |
DIP-8 |
6430 |
原装现货/欢迎来电咨询 |
询价 | |||
FSC |
24+ |
DIP8 |
65200 |
一级代理/放心采购 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
DIP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
DIP8 |
23+ |
FAIRCHILD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCILD |
22+ |
DIP-8 |
8000 |
原装正品支持实单 |
询价 | ||
DIP8 |
14+ |
FAIRCHILD |
47 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
NA/ |
329 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
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