FDMA430NZ

SingleN-Channel2.5VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisSingleN-ChannelMOSFEThasbeendesignedusingFairchildSemiconductor’sadvancedPowerTrenchprocesstooptimizetheRDS(on)@VGS=2.5VonspecialMicroFETleadframe. Features ■RDS(on)=40mΩ@VGS=4.5V,ID=5.0A ■RDS(on)=50mΩ@VGS=2.5V,ID=4.5A ■Low

FDMA430NZ

SingleN-Channel2.5VSpecifiedPowerTrench짰MOSFET30V,5.0A,40m?

FDMA430NZ

SingleN-Channel2.5VSpecifiedPowerTrench짰MOSFET30V,5.0A,40m廓

FDME430NT

N-ChannelPowerTrench짰MOSFET30V,6A,40m廓

FM430

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

FM430M

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

FMM430

LOWVfSCHOTTKYBATTIERRECTIFIER

FPN430

PNPLowSaturationTransistor

PNPLowSaturationTransistor Thesedevicesaredesignedforhighcurrentgainandlow saturationvoltagewithcollectorcurrentsupto2.0Acontinuous. SourcedfromProcessPB.

FPN430A

PNPLowSaturationTransistor

PNPLowSaturationTransistor Thesedevicesaredesignedforhighcurrentgainandlow saturationvoltagewithcollectorcurrentsupto2.0Acontinuous. SourcedfromProcessPB.

FRL430D

2A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro