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CL21A475KBQNNNE

CAP,4.7uF,50V,짹10,X5R,0805

SamsungSamsung semiconductor

三星三星半导体

CL21A475KPFNNNE

SPECIFICATION

SamsungSamsung semiconductor

三星三星半导体

ESVA21A475M

E/SVSeries

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

PSLA21A475M

PL/LSeries

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

SVFB21A475M

SurfacemountresinmoldedchipwithBuilt-infuse,Lowblow-outcurrent(2A)

SurfacemountresinmoldedchipwithBuilt-infuse,Lowblow-outcurrent(2A) TheSV/Fseriesfeaturesabuilt-infusetominimizecircuitdamagefromovercurrentbyprotectionwithlessthanahalfblow-outcurrentoftheformertype. Thisfuse-protectedcapacitorissuitablefornoiseabsorpt

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

SVHB21A475M

SURFACEMOUNTRESINMOLDEDTANTALUMCHIPCAPACITORSHIGHRELIABILITY

NEC’sSV/Hseriessolidtantalumcapacitorhasdevelopedforautomotiveapplication.Comparingtotheformertype(RSeries),thehigherreliabilityandthehigherperformancehavebeenbuiltinthesamechipsizewiththeNEC’soriginaltechnologies. FEATURES TheSV/Hserieshastheh

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

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