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10C150

NANDP-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

10C150

NANDP-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

10C150

NANDP-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

AP10C150H

NANDP-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

AP10C150M

NANDP-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

AP10C150MT

NANDP-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

DSA10C150PB

HighPerformanceSchottkyDiodeLowLossandSoftRecoveryCommonCathode

LowLossandSoftRecovery HighPerformanceSchottkyDiode CommonCathode Features/Advantages: ●VerylowVf ●Extremelylowswitchinglosses ●LowIrmvalues ●Improvedthermalbehaviour ●Highreliabilitycircuitoperation ●Lowvoltagepeaksforreducedprotectioncircuits ●Lownoi

IXYS

IXYS Corporation

DSA10C150PB

SchottkyRectifierDiode

FEATURES ·Improvedthermalbehavior ·Highreliabilitycircuitoperation ·Extremelylowswitchinglosses ·VerylowVf ·Lownoiseswitching MECHANICALCHARACTERISTICS ·RectifiersinSwitchModePowerSupplies(SMPS) ·Freewheelingdiodeinlowvoltageconverters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

DSA10C150UC

HighPerformanceSchottkyDiodeLowLossandSoftRecoveryCommonCathode

IXYS

IXYS Corporation

S10C150C

SchottkyBarrierRectifiers

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheeling

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

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