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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEB05P03	文件：892.36 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-18A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED05P03	文件：370.89 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-15A,RDS(ON)=70mΩ@VGS=-10V. RDS(ON)=120mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED05P03	文件：893.71 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-15A,RDS(ON)=70mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=120mW@VGS=-4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP05P03	文件：892.36 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-18A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP05P03	文件：485.53 Kbytes Page：5 Pages	SingleP-ChannelEnhancementModeMOSFET	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU05P03	文件：893.71 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-15A,RDS(ON)=70mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=120mW@VGS=-4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU05P03	文件：370.89 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-15A,RDS(ON)=70mΩ@VGS=-10V. RDS(ON)=120mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEZ05P03	文件：767.94 Kbytes Page：5 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-93A,RDS(ON)=5.2mW@VGS=-10V. RDS(ON)=8mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科雨电子有限公司	CJT1000100RJJ	TE	20+	电阻器	67	就找我吧!--邀您体验愉快问购元件!	询价

更多CJT05P03TR供应商更新时间2024-6-22 14:16:00

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