EPITAXIAL SILICON POWER TRANSISTORS

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CDIL

11-21 GHz Fundamental Mixer

Key Features • Low Conversion Loss • High Isolation • Wide IF Bandwidth • Passive Double Balanced Topology • Small Die Size: 1160 um x 790 um

文件：304.87 Kbytes 页数：12 Pages

QORVO

威讯联合

Power Transistor NPN Darlington Transistor

PROCESS DETAILS Die Size 131 x 131 MILS Die Thickness 12.5 ±1.0 MILS Emitter Bonding Pad Area 27 x 36 MILS Base Bonding Pad Area 20 x 37 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Ag - 10,000Å

文件：75.76 Kbytes 页数：1 Pages

Central

Highest power density, superior efficiency, powered by leading Chip Scale Package (CSP) technology

文件：2.02113 Mbytes 页数：24 Pages

LUMILEDS