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05N65

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

CEB05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEF05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CJPF05N65

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半导体有限公司

CJPF05N65

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF05N65

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

SK05N65B

650VN-chPlanarMOSFET

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SK05N65B-TF

650VN-chPlanarMOSFET

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

供应商型号品牌批号封装库存备注价格
CJ
2020+
TO-251
350000
100%进口原装正品公司现货库存
询价
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
询价
CENTRAL
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
CENTRAL
SOT252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
CENTRAL
18+
TO-252
41200
原装正品,现货特价
询价
CENTRAL
21+
TO-252
30000
只做正品原装现货
询价
CENTRAL
22+
SOT252
20000
保证原装正品,假一陪十
询价
CENTRAL
23+
TO-252
10000
公司只做原装正品
询价
CENTRAL
TO-252
22+
6000
十年配单,只做原装
询价
HI-SINCERITY
98+
1344
公司优势库存 热卖中!
询价
更多CJD05N65供应商 更新时间2024-10-31 17:41:00