功率 MOSF

Tokmas

托克马斯

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

文件：216.81 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

文件：216.81 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters w

文件：513.9 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体