丝印：CI5；Package：SOT323；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  DC-

文件：488.19 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：CI5；Package：SOT323；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  DC-

文件：488.19 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：CI5；Package：SOT323；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UWQ is suitable for automotive applications requiring specific change control; this part is

文件：549.85 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：CI5；Package：SOT323；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UWQ is suitable for automotive applications requiring specific change control; this part is

文件：549.85 Kbytes 页数：7 Pages

DIODES

美台半导体