CHM62A2PAPT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE20VoltsCURRENT48Ampere FEATURE *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. CONSTRUCTION *N-Ch

CEB62A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,55A,RDS(ON)=10mΩ@VGS=4.5V. RDS(ON)=14mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CED62A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,48A,RDS(ON)=12mΩ@VGS=4.5V. RDS(ON)=17mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEP62A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,55A,RDS(ON)=10mΩ@VGS=4.5V. RDS(ON)=14mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEU62A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,48A,RDS(ON)=12mΩ@VGS=4.5V. RDS(ON)=17mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.