N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 600 Volts CURRENT 1.9 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：197.19 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

Chenmko

力勤

Single-Ended Cordsets

Basic features Approval/Conformity CE EAC WEEE

文件：99.12 Kbytes 页数：2 Pages

Balluff

巴鲁夫

Inductive Sensors

BES M08EH1-PSC20B-S04G-S01 Basic features Additional features Housing resistant to weld spatter Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2

文件：101.45 Kbytes 页数：2 Pages

Balluff

巴鲁夫

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件：75.08 Kbytes 页数：5 Pages

CET

华瑞