| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunications) NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz F=1.5dBat900MHz | SIEMENS Siemens Ltd | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz,F=1.3dBat900MHz •Pb-free(RoHScomp | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP. @VCE=6V,IC=5mA,f=1GHz •HighGain ︱S21︱2=18dBTYP. @VCE=6V,IC=30mA,f=1GHz •MinimumLot-to-Lotvariationsforrobust deviceperformanceandreliableoperation APPLICATIONS •Designedforuseinlownoise | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
LownoisesiliconbipolarRFtransistor Productdescription •NPNsiliconplanarepitaxialtransistorin4-pindual-emitterSOT343packageforlownoiseandlowdistortionwidebandamplifiers.ThisRFtransistorbenefitsfromInfineonlong-termexperienceinRFcomponentsandcombinesease-of-usetostablevolumesproduction,atbenchm | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductorForlownoise,highgainamplifiersupto2GHz.) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6.5GHz,F=3dBat2GHz •ESAQualificationpending | SIEMENS Siemens Ltd | SIEMENS | ||
HiRelNPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
GaAsMMIC(BroadbandPowerAmplifier[800..3500Mhz]DECT,PHS,PCS,GSM,AMPS,WLAN,WLLSingleVoltageSupply) GaAsMMIC ●BroadbandPowerAmplifier[800..3500Mhz] ●DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ●SingleVoltageSupply ●Operatingvoltagerange:2.0to6V ●Pout=25.5dBmatVd=2.4V ●Pout=27.0dBmatVd=3.0V ●Pout=30.0dBmatVd=5.0V ●Overallpoweraddedefficiencyupto50 ●Easyexter | SIEMENS Siemens Ltd | SIEMENS | ||
ULTRASMALLCHIPLEDSFORUSEINVARIOUSELECTRONICPRODUCTS | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Mono-ColorUpward-LightingType Mono-ColorUpward-LightingType ●CompactchipLEDeventhinnerthanCL-190(0.8mmthick). Pleasecontactusatthetimeoforderforthelineupofluminescentcolors. | CITIZEN Citizen Electronics Co., Ltd | CITIZEN | ||
Mono-ColorUpward-LightingType Mono-ColorUpward-LightingType ●CompactchipLEDeventhinnerthanCL-190(0.8mmthick). Pleasecontactusatthetimeoforderforthelineupofluminescentcolors. | CITIZEN Citizen Electronics Co., Ltd | CITIZEN | ||
Mono-ColorUpward-LightingType | CITIZEN Citizen Electronics Co., Ltd | CITIZEN | ||
Featuringworld-classproductvariationsandeaseofSMDassembly.Ultra-smallChip-LEDsforuseinvariouselectronicproducts. 1.AllareSMD(surfacemountdevice)LEDlamps. 2.Varietiesrangefromthestandardtoverysmalland ultra-smallsizesandhighdensitymountingis available. 3.Therearestandardbrightnesstype,superbrightness typeandultrabrightnesstype. 4.Automatedchipmachinemountingallowsf | CITIZEN Citizen Electronics Co., Ltd | CITIZEN | ||
Featuringworld-classproductvariationsandeaseofSMDassembly.Ultra-smallChip-LEDsforuseinvariouselectronicproducts. 1.AllareSMD(surfacemountdevice)LEDlamps. 2.Varietiesrangefromthestandardtoverysmalland ultra-smallsizesandhighdensitymountingis available. 3.Therearestandardbrightnesstype,superbrightness typeandultrabrightnesstype. 4.Automatedchipmachinemountingallowsf | CITIZEN Citizen Electronics Co., Ltd | CITIZEN |
详细参数
- 型号：
CHA-196
- 制造商：
New Japan Radio Co Ltd(NJR/JRC)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2021+ |
LQFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
RENESAS/瑞萨 |
21+ROHS |
QFP44 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
UMS |
2018+ |
SMD |
1680 |
UMS专营进口原装现货假一赔十 |
询价 | ||
BOTHHAND-帛汉 |
24+25+/26+27+ |
车规-电源模块 |
3280 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
UMS |
300 |
询价 | |||||
UMS |
23+ |
QFN |
91 |
全新原装优势 |
询价 | ||
UMS |
21+ |
10 |
全新原装鄙视假货15118075546 |
询价 | |||
UMS |
19+ |
10 |
只做原装 |
询价 | |||
23+ |
N/A |
59210 |
正品授权货源可靠 |
询价 | |||
UMS |
2021+ |
DIE |
3000 |
十年专营原装现货,假一赔十 |
询价 |
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