首页 >CH6601>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT4.3Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
P-channelandN-channelComplementaryMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-channelandP-channelComplementaryMOSFETS | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
NandP-ChannelEnhancementModePowerMOSFET ProductSummary N-Channel Vps=30V,Ip=4A Ros(on)30mQ@Ves=10V(Typ) Ros(on)50mQ@Ves=-4.5V(Typ) P-Channel Vos=-30V,Ip=3A Ros(on)45mQ@Ves=-10V(Typ) Rosion)85mQ@Ves=-4.5V(Typ) | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
CalibrationandAdjustmentSoftwareforAgilentRF/WInstruments | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
Lithium-ionbatterycharginganddischargingswitch Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
N-ChannelPowerMOSFET Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
USBDedicatedChargingPortControllerforFastChargingProtocolandQC2.0/3.0 | FITIPOWERFitipower Integrated Technology Inc. 天鈺科技天鈺科技股份有限公司 | FITIPOWER |
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