首页 >CH314G>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNDigitalSiliconTransistor VOLTAGE30VoltsCURRENT600mAmpere FEATURE *Smallsurfacemountingtype.(SOT-23) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation(VCE(sat)=40mV atIC/IB=50mA/2.5mA). *HighCollectorcurrent(IC(Max.)=600mA). *InternalisolatedNPNtrans | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
NPNDigitalSiliconTransistor VOLTAGE30VoltsCURRENT600mAmpere FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation(VCE(sat)=40mV atIC/IB=50mA/2.5mA). *HighCollectorcurrent(IC(Max.)=600mA). *InternalisolatedNP | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
SILICONTRANSISTORS | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS | ||
WhitetranslucenthighimpactUVstabilizedacryliclens | LUMINIS Lumins Inc. | LUMINIS | ||
DC-10GHzDistributedDriverAmplifier | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | ||
DC-10GHzDistributedDriverAmplifier | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | ||
SmallSignalTransistorNPN-HighCurrentTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize40x40MILS DieThickness9.0MILS BaseBondingPadArea7.9x8.7MILS EmitterBondingPadArea9.0x14MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
NPN-HighCurrentTransistorChip PROCESSCP314V SmallSignalTransistor NPN-HighCurrentTransistorChip | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
GERMANIUMPNPTRANSISTORS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
0.30InchSingleDigitDisplay | CHINASEMI China Semiconductor Corporation | CHINASEMI |
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