350 W; 5200 to 5900-MHz; 50-Ohm Input/Output-Matched; GaN HEMT

5.2 – 5.9 GHz Operation470 W Typical Output Power 10.7 dB Power Gain 60% Typical Drain Efficiency 50 Ohm Internally Matched <0.3 dB Pulsed Amplitude Droop • 5.2 – 5.9 GHz Operation \n•470 W Typical Output Power\n•10.7 dB Power Gain\n•60% Typical Drain Efficiency\n•50 Ohm Internally Matched\n•<0.3 dB Pulsed Amplitude Droop;

MACOM

350 W, 5200 - 5900 MHz, 50-Ohm Input

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科锐

350 W; 5200 to 5900-MHz; 50-Ohm Input/Output-Matched; GaN HEMT

5.2 – 5.9 GHz Operation470 W Typical Output Power 10.7 dB Power Gain 60% Typical Drain Efficiency 50 Ohm Internally Matched <0.3 dB Pulsed Amplitude Droop • 5.2 – 5.9 GHz Operation \n•470 W Typical Output Power\n•10.7 dB Power Gain\n•60% Typical Drain Efficiency\n•50 Ohm Internally Matched\n•<0.3 dB Pulsed Amplitude Droop;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：TEST FIXTURE FOR CGHV59350F

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