200W, 0.05-1.0GHz, 830292P, GaN HEMT, 50

The CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input unmatched to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; high ·Input Unmatched\n·180 W (CW) Minimum Pout\n·250 W Typical Pout\n·24 dB Typical Small Signal Gain\n·28 V and 50 V Operation;

MACOM

Package：440223；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：960-1250MHZ, AMP W/ CGHV40180F

WOLFSPEED

NA

MACOM

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NA

MACOM

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SOD123

COMCHIP

典琦

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