Description

CGHV31500F is a gallium nitride (GaN) high electron mobility transistor

(HEMT) designed specifically with high efficiency, high gain and wide

bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 -

3.1 GHz S-Band radar amplifier applications. The transistor is supplied

in a ceramic/metal flange package, type 440226.

Features

• 2.7 - 3.1 GHz Operation

• 650 W Typical Output Power

• 12 dB Power Gain

• 65 Typical Drain Efficiency

• 50 Ohm Internally MatcheD

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CGHV31500F属于开发板，套件，编程器 > 射频评估和开发套件，开发板。WOLFSPEED, INC.制造生产的CGHV31500F射频评估和开发套件，开发板本系列中的产品适用于在已知实施环境中，提供能访问射频相关器件的功能或者有助于访问该功能。所含的焦点产品范围从射频信号链元器件（如放大器和检测器）到模块化收发器，以及不直接包含焦点产品的适配器硬件，但此类硬件可供方便地访问用户单独提供的特定射频产品或系列。