Description

The CGHV27030S is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT) which offers high efficiency, high gain and wide

bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for

telecommunications applications with frequencies of 700-960 MHz, 1200-1400

MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and

28 V operations. The CGHV27030S is also ideal for tactical communications

applications operating from 20-2500 MHz, including land mobile radios.

Additional applications include L-Band RADAR and S-Band RADAR. The

CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is

available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Features for 50 V in CGHV27030S-AMP1

• 2.5 - 2.7 GHz Operation

• 30 W Typical Output Power

• 20 dB Gain at 5 W PAVE

• -34 dBc ACLR at 5 W PAVE

• 30 efficiency at 5 W PAVE

• High degree of APD and DPD correction can be applied

CGHV27030S属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。WOLFSPEED, INC.制造生产的CGHV27030S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。