800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems

文件：765.37 Kbytes 页数：9 Pages

Cree

科锐

DC-1.4 GHz, 800 W GaN Transistor

Description Wolfspeed’s CGHV14800F1 is an 800W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 0.4um GaN on SiC production process. The CGHV14800F1 operates up to 1.4 GHz and supports both defense and commercial-related avionics and radar applications. The CGHV14

文件：1.13808 Mbytes 页数：18 Pages

WOLFSPEED

800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems

文件：765.37 Kbytes 页数：9 Pages

Cree

科锐

800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems

The CGHV14800 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14800 ideal for 1.2 - 1.4 GHz L-Band radar-amplifier applications. The package options are ceramic/metal flange ·910 W Typical Output Power\n·14 dB Power Gain\n·70% Typical Drain Efficiency\n·<0.3 dB Pulsed Amplitude Droop\n·Internally input and output matched;

MACOM

Package：440117；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 50V 440117

WOLFSPEED

800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems

The CGHV14800 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14800 ideal for 1.2 - 1.4 GHz L-Band radar-amplifier applications. The package options are ceramic/metal flange ·910 W Typical Output Power\n·14 dB Power Gain\n·70% Typical Drain Efficiency\n·<0.3 dB Pulsed Amplitude Droop\n·Internally input and output matched;

MACOM

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGHV14800F DEV BOARD WITH HEMT

WOLFSPEED