180 W RF Power GaN HEMT

The CGH40180PP is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40180PP; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth cap ·Up to 2.5 GHz Operation\n·20 dB Small Signal Gain at 1.0 GHz\n·15 dB Small Signal Gain at 2.0 GHz\n·220 W typical PSAT\n·70 % Efficiency at PSAT\n·28 V Operation;

MACOM

180 W, RF Power GaN HEMT

Description Wolfspeed's CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high

文件：6.17836 Mbytes 页数：14 Pages

WOLFSPEED

180 W, RF Power GaN HEMT

文件：2.16827 Mbytes 页数：13 Pages

CREE

科锐

180 W, RF Power GaN HEMT

文件：2.16827 Mbytes 页数：13 Pages

CREE

科锐

180 W, RF Power GaN HEMT

文件：2.16827 Mbytes 页数：13 Pages

CREE

科锐

Package：440199；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 28V 440199

WOLFSPEED

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGH40180PP DEV BOARD WITH HEMT

WOLFSPEED

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD DEMO AMP CIRCUIT CGH40180

WOLFSPEED