CGH40180PP分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

CGH40180PP属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的CGH40180PP晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

描述 Description

Wolfspeed's CGH40180PP is an unmatched, gallium

nitride (GaN) high electron mobility transistor (HEMT). The

CGH40180PP, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave

applications. GaN HEMTs offer high efficiency, high gain and

wide bandwidth capabilities making the CGH40180PP ideal

for linear and compressed amplifier circuits. The transistor is

available in a 4-lead flange package.

特性 Features

• Up to 2.5 GHz Operation

• 20 dB Small Signal Gain at 1.0 GHz

• 15 dB Small Signal Gain at 2.0 GHz

• 220 W typical PSAT

• 70 Efficiency at PSAT

• 28 V Operation

Large Signal Models Available for ADS and MWO

Applications

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms