90 W RF Power GaN HEMT

The CGH40090PP is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth cap ·Up to 2.5 GHz Operation\n·16 dB Small Signal Gain at 2.0 GHz\n·100 W Typical PSAT\n·55% Efficiency at PSAT\n·28 V Operation;

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90 W, RF Power GaN HEMT

Description Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain

文件：1.69173 Mbytes 页数：13 Pages

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90 W, RF Power GaN HEMT

文件：1.43751 Mbytes 页数：13 Pages

CREE

科锐

90 W, RF Power GaN HEMT

文件：1.43751 Mbytes 页数：13 Pages

CREE

科锐

90 W, RF Power GaN HEMT

文件：1.43751 Mbytes 页数：13 Pages

CREE

科锐

Package：440199；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 28V 440199

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包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGH40090PP DEV BOARD WITH HEMT

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包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD DEMO AMP CIRCUIT CGH40090

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